Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, SODIMM Memory, Single Rank
  • Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, SODIMM Memory, Single Rank
  • Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, SODIMM Memory, Single Rank
  • Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, SODIMM Memory, Single Rank
  • Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, SODIMM Memory, Single Rank

Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, SODIMM Memory, Single Rank

£20.54
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28 items
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4GB 1Rx8 512M x 64-Bit PC3-10600 CL9 204-Pin SODIMM
 
ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers.
 
 
Features
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
Quantity
In Stock

4GB 1Rx8 512M x 64-Bit PC3-10600 CL9 204-Pin SODIMM
 
ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers.
 
 
Features
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
KINGSTON
KVR13S9S8/4
28 Items

Data sheet

Warranty
Lifetime
DDR Type
SODIMM DDR3
Package Type
Blister Pack
Package Weight
0.0155 kg
Series
Kingston ValueRAM
Size
1 x 4GB
4GB
Speed
1333 MHz
Compliance
PC3-10600
Pins
204-pin
CAS Latency
CL9
Data Integrity Check
Non-ECC
Voltage
1.5V
Additional Information
Single rank, Unbuffered
Single rankUnbuffered
Individual Module Size
4GB
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Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, SODIMM Memory, Single Rank https://www.westbrookcomputers.co.uk/9383-large/kingston-4gb-ddr3-1333mhz-pc3-10600-cl9-sodimm-memory-single-rank.jpg <div> <span style="font-size:14px;"><strong>4GB 1Rx8 512M x 64-Bit PC3-10600 CL9 204-Pin SODIMM</strong></span></div> <div> &nbsp;</div> <div> ValueRAM&#39;s 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers.</div> <div> &nbsp;</div> <div> &nbsp;</div> <div> <strong>Features</strong></div> <div> &bull; JEDEC standard 1.5V (1.425V ~1.575V) Power Supply</div> <div> &bull; VDDQ = 1.5V (1.425V ~ 1.575V)</div> <div> &bull; 667MHz fCK for 1333Mb/sec/pin</div> <div> &bull; 8 independent internal bank</div> <div> &bull; Programmable CAS Latency: 9, 8, 7, 6</div> <div> &bull; Programmable Additive Latency: 0, CL - 2, or CL - 1 clock</div> <div> &bull; Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)</div> <div> &bull; 8-bit pre-fetch</div> <div> &bull; Burst Length: 8 (Interleave without any limit, sequential with</div> <div> starting address &ldquo;000&rdquo; only), 4 with tCCD = 4 which does not</div> <div> allow seamless read or write [either on the fly using A12 or</div> <div> MRS]</div> <div> &bull; Bi-directional Differential Data Strobe</div> <div> &bull; Internal(self) calibration : Internal self calibration through ZQ</div> <div> pin (RZQ : 240 ohm &plusmn; 1%)</div> <div> &bull; On Die Termination using ODT pin</div> <div> &bull; Average Refresh Period 7.8us at lower than TCASE 85&deg;C,</div> <div> 3.9us at 85&deg;C < TCASE < 95&deg;C</div> <div> &bull; Asynchronous Reset</div> <div> &bull; PCB: Height 1.18&rdquo; (30mm), double sided component</div> memory-laptop 740617207767 20.54 GBP in_stock